Abstract and keywords
Abstract (English):
This article provides a brief historical overview of semiconductor LEDs. Examined trends and prospects for the development of solid-state lighting. A role is specified in the description of the structural characteristics of the material to improve the parameters of radiation of the LEDs.

Keywords:
light-emitting diodes, solid-state lighting, multifractal analysis, nanostructural arrangement of the material, external quantum efficiency
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References

1. Bahtizin R.Z. Golubye diody // Sorovskiy obrazovatel'nyy zhurnal. 2001. № 3. S. 75.

2. Zakgeym A.L. Svetodiodnye sistemy osvescheniya: energoeffektivnost', zritel'noe vospriyatie, bezopasnost' dlya zdorov'ya (obzor) // Svetotehnika. 2012. № 6. S. 12-21.

3. Shubert F. Svetodiody: per. s angl. A.E. Yunovicha. 2-e izd. M: FIZMATLIT, 2008.

4. Yunovich A.E. Svetodiody i ih primenenie dlya osvescheniya. M.: Znak, 2011.

5. Nakamura S., Senoh M., Iwasa N. High-power single-quantum-well structure blue and violet light-emitting diodes // Appl. Phys. Lett. 1995. № 13. R. 1868.

6. CREE LED Lighting. URL: http://www.cree.com/Lighting/Document-Library (data obrascheniya: 21.10.2014).

7. Degave F., Ruterana P., Nouet G. Metalorganic chemical vapor deposition growth of a GaN epilayer on an annealedGaN buffer layer // Phys. stat. sol.(c). 2002. P. 546.

8. Lafford T.A., Parbrook P.J. Direct, independent vtasurement of twist and tilt mosaic as function of thickness in epitaxial GaN // Phys. stat. sol.(c). 2002. P. 542.

9. Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure / A.V. Ankudinov [et al.] // Physica B. 2003. P. 462.

10. Karpolnek D., Keller S., Speck J.S. Structural evolution in epitaxial metalorganic chemical vapor deposition GaN films on sapphire // Appl. Phys. Lett. 1995. № 11.

11. Gibar P. Metal organic vapour phase epitaxy of GaN and lateral overgrouth // Rep. Prog. Phys. 2004.

12. Karpov S.Yu., Makarov Yu.N. Dislocation effect on light emission efficiency in gallium nitride // Appl. Phys. Lett. 2002. P. 4721.

13. Li D.S., Chen H., Yu H.B. Dependence of leakage current on dislocations in GaN-based Light-emitting diodes // J. of Appl. Physics. 2004. P. 1111.

14. Vstovskiy G.V., Kolmakov A.G., Bunin I.Zh. Vvedenie v mul'tifraktal'nuyu parametrizaciyu struktur materialov. Izhevsk: NIC «Regulyarnaya i haoticheskaya dinamika», 2001. S. 116.

15. Emtsev V.V., Kolmakov A.G., Kryzhanovsky A.D. A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers // Physica B: Physics of Condensed Matter. 2001.

16. Dinamika izluchatel'noy i bezyzluchatel'noy rekombinacii sinih svetodiodov: tezisy dokladov IV-y Vseros. konf. «Nitridy galliya, indiya i alyuminiya - struktury i pribory» / A.A. Greshnov [i dr.]. M.: 2007. S. 27.

17. Vliyanie urovnya legirovaniya kremniem i haraktera nanostrukturnoy organizacii na padenie s tokom vneshney kvantovoy effektivnosti InGaN/GaN-svetodiodov / B.Ya. Ber [i dr.] // Fizika i tehnika poluprovodnikov. 2011. № 3. S. 425-431.

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